Terméklista
| Összehasonlítás | Kép | Rész # | Gyártó | Leírás | Leltár | ECAD modell | RoHS | FET funkció | Leeresztés a forrásfeszültséghez (Vdss) | Áram - Folyamatos leeresztés (Id) @ 25 ° C | RDS bekapcsolva (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Kapu töltés (Qg) (Max) @ Vgs | Bemeneti kapacitás (Ciss) (Max) @ Vds | Feszültség - teszt | Hajtás feszültség (Max Rds bekapcsolva, Min Rds bekapcsolva) | Vgs (Max) | FET típus | Más nevek | Alaptermék száma | Csomag | Sorozat | Gyártási szám | Leírás | Nedvességérzékenységi szint (MSL) | A gyártó szabványos leadási ideje | Bővített leírás | RoHS állapot | Technológia | Üzemi hőmérséklet | Szerelési típus | Csomagolás / tok | Polarizáció | Szállító eszközcsomag | Feszültségelosztás | Teljesítményleadás (Max) | Kapacitásarány | Mennyiség |
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SPS04N60C3 | Infineon Technologies | N-CHANNEL POWER MOSFET | Raktáron81180 pcs | - | 600 V | 4.5A (Tc) | 950mOhm @ 2.8A, 10V | 3.9V @ 200µA | 25 nC @ 10 V | 490 pF @ 25 V | - | 10V | ±20V | N-Channel | - | - | Bulk | CoolMOS™ | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | - | PG-TO251 | - | 50W (Tc) | - | ||||
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BSC100N03MSGATMA1 | Infineon Technologies | MOSFET N-CH 30V 12A/44A TDSON | Raktáron116530 pcs | - | 30 V | 12A (Ta), 44A (Tc) | 10mOhm @ 30A, 10V | 2V @ 250µA | 23 nC @ 10 V | 1700 pF @ 15 V | - | 4.5V, 10V | ±20V | N-Channel | - | BSC100 | Tape & Reel (TR) | OptiMOS™ | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | - | PG-TDSON-8-5 | - | 2.5W (Ta), 30W (Tc) | - | ||||
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SIR462DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 30A PPAK SO-8 | Raktáron53790 pcs | - | 30 V | 30A (Tc) | 7.9mOhm @ 20A, 10V | 3V @ 250µA | 30 nC @ 10 V | 1155 pF @ 15 V | - | 4.5V, 10V | ±20V | N-Channel | - | SIR462 | Tape & Reel (TR) | TrenchFET® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | - | PowerPAK® SO-8 | - | 4.8W (Ta), 41.7W (Tc) | - | ||||
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NX2301P,215 | Nexperia USA Inc. | MOSFET P-CH 20V 2A TO236AB | Raktáron308700 pcs | - | 20 V | 2A (Ta) | 120mOhm @ 1A, 4.5V | 1.1V @ 250µA | 6 nC @ 4.5 V | 380 pF @ 6 V | - | 2.5V, 4.5V | ±8V | P-Channel | - | NX2301 | Tape & Reel (TR) | Automotive, AEC-Q101, TrenchMOS™ | - | - | - | - | - | - | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | - | TO-236AB | - | 400mW (Ta), 2.8W (Tc) | - | ||||
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FDN86265P | Fairchild Semiconductor | P-CHANNEL POWERTRENCH MOSFET -15 | Raktáron4090 pcs | - | 150 V | 800mA (Ta) | 1.2Ohm @ 800mA, 10V | 4V @ 250µA | 4.1 nC @ 10 V | 210 pF @ 75 V | - | 6V, 10V | ±25V | P-Channel | - | - | Bulk | PowerTrench® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | - | SOT-23-3 | - | 1.5W (Ta) | - | ||||
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AOB2502L | Alpha & Omega Semiconductor Inc. | MOSFET N-CH 150V 106A TO263 | Raktáron3620 pcs | - | 150 V | 106A (Tc) | 10.7mOhm @ 20A, 10V | 5.1V @ 250µA | 60 nC @ 10 V | 3010 pF @ 75 V | - | 10V | ±20V | N-Channel | - | AOB2502 | Tape & Reel (TR) | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | TO-263 (D2Pak) | - | 277W (Tc) | - | ||||
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IXFK170N10 | IXYS | MOSFET N-CH 100V 170A TO-264AA | Raktáron1633 pcs | - | 100 V | 170A (Tc) | 10mOhm @ 500mA, 10V | 4V @ 8mA | 515 nC @ 10 V | 10300 pF @ 25 V | - | 10V | ±20V | N-Channel | - | IXFK170 | Tube | HiPerFET™ | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | - | TO-264AA (IXFK) | - | 560W (Tc) | - | ||||
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UPA2210T1M-T1-AT | Renesas Electronics America Inc | MOSFET P-CH 20V 7.2A 8VSOF | Raktáron54490 pcs | - | 20 V | 7.2A (Ta) | 29mOhm @ 7.2A, 4.5V | 1.5V @ 1mA | 16.3 nC @ 4.5 V | 1350 pF @ 10 V | - | - | - | P-Channel | - | - | Bulk | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | - | 8-VSOF | - | 1.1W (Ta) | - | ||||
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MMDF7N02ZR2 | onsemi | SMALL SIGNAL N-CHANNEL MOSFET | Raktáron164820 pcs | - | - | - | - | - | - | - | - | - | - | - | - | - | Bulk | * | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||||
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NP52N06SLG-E1-AY | Renesas Electronics America | MOSFET N-CH 60V 52A TO252 | Raktáron51010 pcs | N-Channel | - | 60V | 52A (Tc) | 17.5 mOhm @ 26A, 10V | - | 39nC @ 10V | 2100pF @ 10V | - | - | - | NP52N06SLG-E1-AY-ND NP52N06SLG-E1-AYTR |
- | - | - | NP52N06SLG-E1-AY | MOSFET N-CH 60V 52A TO252 | 1 (Unlimited) | 16 Weeks | N-Channel 60V 52A (Tc) 1.2W (Ta), 56W (Tc) Surface Mount TO-252 (MP-3ZK) | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | - | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | TO-252 (MP-3ZK) | - | 1.2W (Ta), 56W (Tc) | ||||
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IPI60R190C6XKSA1 | Infineon Technologies | MOSFET N-CH 600V 20.2A TO262-3 | Raktáron15480 pcs | - | 600 V | 20.2A (Tc) | 190mOhm @ 9.5A, 10V | 3.5V @ 630µA | 63 nC @ 10 V | 1400 pF @ 100 V | - | 10V | ±20V | N-Channel | - | IPI60R190 | Tube | CoolMOS™ | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | - | PG-TO262-3 | - | 151W (Tc) | - | ||||
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RJK0351DPA-00#J0 | Renesas Electronics America Inc | MOSFET N-CH 30V 40A 8WPAK | Raktáron35280 pcs | - | 30 V | 40A (Ta) | 4.2mOhm @ 20A, 10V | - | 17 nC @ 4.5 V | 2560 pF @ 10 V | - | - | - | N-Channel | - | - | Bulk | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerWDFN | - | 8-WPAK | - | 45W (Tc) | - | ||||
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ZXM64N035GTA | Diodes Incorporated | MOSFET N-CH 35V 4.8A/6.7A SOT223 | Raktáron5360 pcs | - | 35 V | 4.8A (Ta), 6.7A (Tc) | 50mOhm @ 3.7A, 10V | 1V @ 250µA | 27 nC @ 10 V | 950 pF @ 25 V | - | 4.5V, 10V | ±20V | N-Channel | - | - | Tape & Reel (TR) | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | - | SOT-223-3 | - | 2W (Ta) | - | ||||
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CPC3909CTR | IXYS Integrated Circuits Division | MOSFET N-CH 400V 300MA SOT89 | Raktáron88280 pcs | Depletion Mode | 400 V | 300mA (Ta) | 9Ohm @ 300mA, 0V | - | - | - | - | 0V | 15V | N-Channel | - | CPC3909 | Tape & Reel (TR) | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -40°C ~ 110°C (TA) | Surface Mount | TO-243AA | - | SOT-89 | - | 1.1W (Ta) | - | ||||
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SI3407-TP | Micro Commercial Co | MOSFET P-CH 30V 4.1A SOT23 | Raktáron491210 pcs | - | 30 V | 4.1A (Ta) | 87mOhm @ 2.9A, 4.5V | 3V @ 250µA | - | 700 pF @ 15 V | - | 10V | ±20V | P-Channel | - | SI3407 | Tape & Reel (TR) | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | - | SOT-23 | - | 1.3W | - | ||||
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AON1634 | Alpha & Omega Semiconductor Inc. | MOSFET N-CH 30V 4A 6DFN | Raktáron375720 pcs | - | 30 V | 4A (Ta) | 54mOhm @ 4A, 10V | 1.5V @ 250µA | 10 nC @ 10 V | 245 pF @ 15 V | - | 2.5V, 10V | ±12V | N-Channel | - | AON16 | Tape & Reel (TR) | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-PowerUFDFN | - | 6-DFN (1.6x1.6) | - | 1.8W (Ta) | - | ||||
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FQP45N15V2 | Fairchild Semiconductor | POWER FIELD-EFFECT TRANSISTOR, 4 | Raktáron4080 pcs | - | 150 V | 45A (Tc) | 40mOhm @ 22.5A, 10V | 4V @ 250µA | 94 nC @ 10 V | 3030 pF @ 25 V | - | 10V | ±30V | N-Channel | - | - | Bulk | QFET® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | - | TO-220-3 | - | 220W (Tc) | - | ||||
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NVMFS5C468NT1G | onsemi | MOSFET N-CH 40V 12A/35A 5DFN | Raktáron76420 pcs | - | 40 V | 12A (Ta), 35A (Tc) | 12mOhm @ 10A, 10V | 3.5V @ 250µA | 7.9 nC @ 10 V | 420 pF @ 25 V | - | 10V | ±20V | N-Channel | - | NVMFS5 | Tape & Reel (TR) | Automotive, AEC-Q101 | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN, 5 Leads | - | 5-DFN (5x6) (8-SOFL) | - | 3.5W (Ta), 28W (Tc) | - | ||||
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BSB056N10NN3GXUMA1 | Infineon Technologies | MOSFET N-CH 100V 9A/83A 2WDSON | Raktáron17482 pcs | - | 100 V | 9A (Ta), 83A (Tc) | 5.6mOhm @ 30A, 10V | 3.5V @ 100µA | 74 nC @ 10 V | 5500 pF @ 50 V | - | 6V, 10V | ±20V | N-Channel | - | BSB056 | Tape & Reel (TR) | OptiMOS™ | - | - | - | - | - | - | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 3-WDSON | - | MG-WDSON-2, CanPAK M™ | - | 2.8W (Ta), 78W (Tc) | - | ||||
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RJK03B9DPA-00#J53 | Renesas Electronics America Inc | MOSFET N-CH 30V 30A 8WPAK | Raktáron89260 pcs | - | 30 V | 30A (Ta) | 10.6mOhm @ 15A, 10V | - | 7.4 nC @ 4.5 V | 1110 pF @ 10 V | - | - | - | N-Channel | - | - | Bulk | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerWDFN | - | 8-WPAK | - | 25W (Tc) | - | ||||
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AOD4TL60 | Alpha & Omega Semiconductor Inc. | MOSFET N-CH DPAK | Raktáron4760 pcs | - | - | - | - | - | - | - | - | - | - | - | - | AOD4 | Tape & Reel (TR) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||||
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SI7888DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 9.4A PPAK SO-8 | Raktáron4340 pcs | - | 30 V | 9.4A (Ta) | 12mOhm @ 12.4A, 10V | 2V @ 250µA | 10.5 nC @ 5 V | - | - | 4.5V, 10V | ±12V | N-Channel | - | SI7888 | Tape & Reel (TR) | TrenchFET® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | - | PowerPAK® SO-8 | - | 1.8W (Ta) | - | ||||
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IRFU3806PBF | International Rectifier | MOSFET N-CH 60V 43A IPAK | Raktáron5340 pcs | - | 60 V | 43A (Tc) | 15.8mOhm @ 25A, 10V | 4V @ 50µA | 30 nC @ 10 V | 1150 pF @ 50 V | - | - | ±20V | N-Channel | - | - | Bulk | HEXFET® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | - | IPAK (TO-251AA) | - | 71W (Tc) | - | ||||
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IXFN200N07 | IXYS | MOSFET N-CH 70V 200A SOT-227B | Raktáron4620 pcs | - | 70 V | 200A (Tc) | 6mOhm @ 500mA, 10V | 4V @ 8mA | 480 nC @ 10 V | 9000 pF @ 25 V | - | 10V | ±20V | N-Channel | - | IXFN200 | Tube | HiPerFET™ | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | - | SOT-227B | - | 520W (Tc) | - | ||||
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BSC022N03S | Infineon Technologies | MOSFET N-CH 30V 28A/100A TDSON | Raktáron3740 pcs | - | 30 V | 28A (Ta), 100A (Tc) | 2.2mOhm @ 50A, 10V | 2V @ 100µA | 58 nC @ 5 V | 7490 pF @ 15 V | - | 4.5V, 10V | ±20V | N-Channel | - | - | Tape & Reel (TR) | OptiMOS™ | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | - | PG-TDSON-8-1 | - | 2.8W (Ta), 104W (Tc) | - | ||||
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FQA5N90 | Fairchild Semiconductor | MOSFET N-CH 900V 5.8A TO3P | Raktáron30849 pcs | - | 900 V | 5.8A (Tc) | 2.3Ohm @ 2.9A, 10V | 5V @ 250µA | 40 nC @ 10 V | 1550 pF @ 25 V | - | 10V | ±30V | N-Channel | - | - | Tube | QFET® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | - | TO-3P | - | 185W (Tc) | - | ||||
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FQP19N10L | Fairchild Semiconductor | MOSFET N-CH 100V 19A TO220-3 | Raktáron109330 pcs | - | 100 V | 19A (Tc) | 100mOhm @ 9.5A, 10V | 2V @ 250µA | 18 nC @ 5 V | 870 pF @ 25 V | - | 5V, 10V | ±20V | N-Channel | - | - | Tube | QFET® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | - | TO-220-3 | - | 75W (Tc) | - | ||||
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SI7370DP-T1-E3 | Vishay Siliconix | MOSFET N-CH 60V 9.6A PPAK SO-8 | Raktáron25084 pcs | - | 60 V | 9.6A (Ta) | 11mOhm @ 12A, 10V | 4V @ 250µA | 57 nC @ 10 V | - | - | 6V, 10V | ±20V | N-Channel | - | SI7370 | Tape & Reel (TR) | TrenchFET® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | - | PowerPAK® SO-8 | - | 1.9W (Ta) | - | ||||
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R6020JNJGTL | Rohm Semiconductor | MOSFET N-CH 600V 20A LPTS | Raktáron9143 pcs | - | 600 V | 20A (Tc) | 234mOhm @ 10A, 15V | 7V @ 3.5mA | 45 nC @ 15 V | 1500 pF @ 100 V | - | 15V | ±30V | N-Channel | - | R6020 | Tape & Reel (TR) | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | LPTS | - | 252W (Tc) | - | ||||
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SPW07N60CFD | Infineon Technologies | N-CHANNEL POWER MOSFET | Raktáron35610 pcs | - | - | - | - | - | - | - | - | - | - | - | - | - | Bulk | * | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||||
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SI1031R-T1-E3 | Vishay Siliconix | MOSFET P-CH 20V 140MA SC75A | Raktáron4970 pcs | - | 20 V | 140mA (Ta) | 8Ohm @ 150mA, 4.5V | 1.2V @ 250µA | 1.5 nC @ 4.5 V | - | - | 1.5V, 4.5V | ±6V | P-Channel | - | SI1031 | Tape & Reel (TR) | TrenchFET® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SC-75, SOT-416 | - | SC-75A | - | 250mW (Ta) | - | ||||
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FDY302NZ | onsemi | MOSFET N-CH 20V 600MA SC89-3 | Raktáron365010 pcs | - | 20 V | 600mA (Ta) | 300mOhm @ 600mA, 4.5V | 1.5V @ 250µA | 1.1 nC @ 4.5 V | 60 pF @ 10 V | - | 1.8V, 4.5V | ±12V | N-Channel | - | FDY302 | Tape & Reel (TR) | PowerTrench® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SC-89, SOT-490 | - | SC-89-3 | - | 625mW (Ta) | - | ||||
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SQP120N10-3M8_GE3 | Vishay Siliconix | MOSFET N-CH 100V 120A TO220AB | Raktáron4980 pcs | - | 100 V | 120A (Tc) | 3.8mOhm @ 20A, 10V | 3.5V @ 250µA | 190 nC @ 10 V | 7230 pF @ 25 V | - | 10V | ±20V | N-Channel | - | SQP120 | Tube | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | - | TO-220AB | - | 250W (Tc) | - | ||||
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FQAF19N60 | Fairchild Semiconductor | MOSFET N-CH 600V 11.2A TO3PF | Raktáron16762 pcs | - | 600 V | 11.2A (Tc) | 380mOhm @ 5.6A, 10V | 5V @ 250µA | 90 nC @ 10 V | 3600 pF @ 25 V | - | 10V | ±30V | N-Channel | - | - | Tube | QFET® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3 Full Pack | - | TO-3PF | - | 120W (Tc) | - | ||||
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2SK2480-AZ | Renesas Electronics America Inc | N-CHANNEL POWER MOSFET | Raktáron9691 pcs | - | - | - | - | - | - | - | - | - | - | - | - | - | Bulk | * | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||||
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FDU6644 | Fairchild Semiconductor | N-CHANNEL POWER MOSFET | Raktáron22865 pcs | - | 30 V | 67A (Ta) | 8.5mOhm @ 16A, 10V | 3V @ 250µA | 35 nC @ 5 V | 3087 pF @ 15 V | - | 4.5V, 10V | ±16V | N-Channel | - | - | Bulk | PowerTrench® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | - | TO-251 (IPAK) | - | 1.6W (Ta) | - | ||||
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IRFSL4010PBF | Infineon Technologies | MOSFET N-CH 100V 180A TO262 | Raktáron16618 pcs | - | 100 V | 180A (Tc) | 4.7mOhm @ 106A, 10V | 4V @ 250µA | 215 nC @ 10 V | 9575 pF @ 50 V | - | 10V | ±20V | N-Channel | - | IRFSL4010 | Tube | HEXFET® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | - | TO-262 | - | 375W (Tc) | - | ||||
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FDMA0104 | onsemi | MOSFET N-CH 20V 9.4A 6MICROFET | Raktáron4330 pcs | - | 20 V | 9.4A (Ta) | 14.5mOhm @ 9.4A, 4.5V | 1V @ 250µA | 17.5 nC @ 4.5 V | 1680 pF @ 10 V | - | - | - | N-Channel | - | FDMA01 | Tape & Reel (TR) | PowerTrench® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | - | 6-MicroFET (2x2) | - | 1.9W (Ta) | - | ||||
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IXFH80N08 | IXYS | MOSFET N-CH 80V 80A TO247AD | Raktáron4500 pcs | - | 80 V | 80A (Tc) | 9mOhm @ 40A, 10V | 4V @ 4mA | 180 nC @ 10 V | 4800 pF @ 25 V | - | 10V | ±20V | N-Channel | - | IXFH80 | Tube | HiPerFET™ | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | - | TO-247AD (IXFH) | - | 300W (Tc) | - | ||||
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IPA60R080P7 | Infineon Technologies | POWER FIELD-EFFECT TRANSISTOR | Raktáron4380 pcs | - | - | - | - | - | - | - | - | - | - | - | - | - | Bulk | * | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||||
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SI1405DL-T1-GE3 | Vishay Siliconix | MOSFET P-CH 8V 1.6A SC70-6 | Raktáron4220 pcs | - | 8 V | 1.6A (Ta) | 125mOhm @ 1.8A, 4.5V | 450mV @ 250µA (Min) | 7 nC @ 4.5 V | - | - | 1.8V, 4.5V | ±8V | P-Channel | - | SI1405 | Tape & Reel (TR) | TrenchFET® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | - | SC-70-6 | - | 568mW (Ta) | - | ||||
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IRFR014TRPBF | Vishay Siliconix | MOSFET N-CH 60V 7.7A DPAK | Raktáron69080 pcs | - | 60 V | 7.7A (Tc) | 200mOhm @ 4.6A, 10V | 4V @ 250µA | 11 nC @ 10 V | 300 pF @ 25 V | - | 10V | ±20V | N-Channel | - | IRFR014 | Tape & Reel (TR) | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | D-Pak | - | 2.5W (Ta), 25W (Tc) | - | ||||
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PMV65XPEAR | Nexperia USA Inc. | MOSFET P-CH 20V 2.8A TO236AB | Raktáron197130 pcs | - | 20 V | 2.8A (Ta) | 78mOhm @ 2.8A, 4.5V | 1.25V @ 250µA | 9 nC @ 4.5 V | 618 pF @ 10 V | - | 2.5V, 4.5V | ±12V | P-Channel | - | PMV65 | Tape & Reel (TR) | Automotive, AEC-Q100 | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | - | TO-236AB | - | 480mW (Ta), 6.25W (Tc) | - | ||||
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SSP1N60A | Fairchild Semiconductor | N-CHANNEL POWER MOSFET | Raktáron307120 pcs | - | 600 V | 1A (Tc) | 12Ohm @ 500mA, 10V | 4V @ 250µA | 11 nC @ 10 V | 190 pF @ 25 V | - | 10V | ±30V | N-Channel | - | - | Bulk | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | - | TO-220 | - | 34W (Tc) | - | ||||
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IXFH80N20Q | IXYS | MOSFET N-CH 200V 80A TO247AD | Raktáron5020 pcs | - | 200 V | 80A (Tc) | 28mOhm @ 500mA, 10V | 4V @ 4mA | 180 nC @ 10 V | 4600 pF @ 25 V | - | 10V | ±20V | N-Channel | - | IXFH80 | Tube | HiPerFET™ | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | - | TO-247AD (IXFH) | - | 360W (Tc) | - | ||||
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DMP4025SFGQ-13 | Diodes Incorporated | MOSFET P-CH 40V 7.2A PWRDI3333-8 | Raktáron150360 pcs | - | 40 V | 7.2A (Ta) | 25mOhm @ 3A, 10V | 1.8V @ 250µA | 33.7 nC @ 10 V | 1643 pF @ 20 V | - | 4.5V, 10V | ±20V | P-Channel | - | DMP4025 | Tape & Reel (TR) | Automotive, AEC-Q101 | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | - | PowerDI3333-8 | - | 810mW (Ta) | - | ||||
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IRFH8334TR2PBF | Infineon Technologies | MOSFET N-CH 30V 12A 5X6 PQFN | Raktáron3710 pcs | - | 30 V | 14A (Ta), 44A (Tc) | 9mOhm @ 20A, 10V | 2.35V @ 25µA | 15 nC @ 10 V | 1180 pF @ 10 V | - | - | - | N-Channel | - | - | Cut Tape (CT) | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | - | Surface Mount | 8-PowerTDFN | - | PQFN (5x6) | - | - | - | ||||
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NVMFS6B85NLT3G | onsemi | MOSFET N-CH 100V 5.6A/19A 5DFN | Raktáron3670 pcs | - | 100 V | 5.6A (Ta), 19A (Tc) | 46mOhm @ 10A, 10V | 2.4V @ 250µA | 7.9 nC @ 10 V | 480 pF @ 25 V | - | 4.5V, 10V | ±16V | N-Channel | - | NVMFS6 | Tape & Reel (TR) | Automotive, AEC-Q101 | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN, 5 Leads | - | 5-DFN (5x6) (8-SOFL) | - | 3.5W (Ta), 42W (Tc) | - | ||||
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IRF3709LPBF | Infineon Technologies | MOSFET N-CH 30V 90A TO262 | Raktáron4450 pcs | - | 30 V | 90A (Tc) | 9mOhm @ 15A, 10V | 3V @ 250µA | 41 nC @ 5 V | 2672 pF @ 16 V | - | 4.5V, 10V | ±20V | N-Channel | - | - | Tube | HEXFET® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | - | TO-262 | - | 3.1W (Ta), 120W (Tc) | - | ||||
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BSL211SPL6327 | Infineon Technologies | P-CHANNEL POWER MOSFET | Raktáron4530 pcs | - | 20 V | 4.7A (Ta) | 67mOhm @ 4.7A, 4.5V | 1.2V @ 25µA | 12.4 nC @ 4.5 V | 654 pF @ 15 V | - | 2.5V, 4.5V | ±12V | P-Channel | - | - | Bulk | OptiMOS™-P | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | - | PG-TSOP6-6-6 | - | 2W (Ta) | - |